BST82,215
vs
BSS131E-6327
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
TO-236
|
SOT-23
|
| Package Description |
SOT-23, 3 PIN
|
CYLINDRICAL, O-PBCY-T3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
SOT23
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.21.00.95
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
80 V
|
240 V
|
| Drain Current-Max (ID) |
0.175 A
|
0.1 A
|
| Drain-source On Resistance-Max |
10 Ω
|
16 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
6 pF
|
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
|
|
|
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