BST60-T
vs
BCX69
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
SOT-89
|
|
| Package Description |
SMALL OUTLINE, R-PSSO-F3
|
SMALL OUTLINE, R-PSSO-F3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
45 V
|
20 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
2000
|
85
|
| JEDEC-95 Code |
TO-243AA
|
|
| JESD-30 Code |
R-PSSO-F3
|
R-PSSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
100 MHz
|
| VCEsat-Max |
1.3 V
|
0.5 V
|
| Base Number Matches |
6
|
12
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.75
|
| JESD-609 Code |
|
e0
|
| Power Dissipation Ambient-Max |
|
1 W
|
| Power Dissipation-Max (Abs) |
|
2 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare BST60-T with alternatives
Compare BCX69 with alternatives