BSS84S62Z vs LBSS84LT1G feature comparison

BSS84S62Z Fairchild Semiconductor Corporation

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LBSS84LT1G LRC Leshan Radio Co Ltd

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 50 V
Drain Current-Max (ID) 0.13 A 0.13 A
Drain-source On Resistance-Max 10 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.225 W
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

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