BSS84PH6433XTMA1 vs VP0106N3-G feature comparison

BSS84PH6433XTMA1 Infineon Technologies AG

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VP0106N3-G Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG MICROCHIP TECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Microchip
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.17 A 0.25 A
Drain-source On Resistance-Max 8 Ω 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF 8 pF
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 0.36 W 1 W
Reference Standard AEC-Q101
Surface Mount YES NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 6
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
JEDEC-95 Code TO-92
Operating Temperature-Min -55 °C
Qualification Status Not Qualified

Compare BSS84PH6433XTMA1 with alternatives

Compare VP0106N3-G with alternatives