BSS84P
vs
BSS84PH6327XTSA2
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
SIEMENS A G
|
INFINEON TECHNOLOGIES AG
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.17 A
|
0.17 A
|
Drain-source On Resistance-Max |
8 Ω
|
8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
5 pF
|
3 pF
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
18 Weeks, 5 Days
|
Samacsys Manufacturer |
|
Infineon
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation-Max (Abs) |
|
0.36 W
|
Reference Standard |
|
AEC-Q101
|
Terminal Finish |
|
Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BSS84P with alternatives
Compare BSS84PH6327XTSA2 with alternatives