BSS83TRL13 vs BSS83-T feature comparison

BSS83TRL13 YAGEO Corporation

Buy Now Datasheet

BSS83-T NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE SUBSTRATE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 10 V 10 V
Drain Current-Max (ID) 0.05 A 0.05 A
Drain-source On Resistance-Max 45 Ω 120 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Operating Temperature-Max 125 °C

Compare BSS83TRL13 with alternatives

Compare BSS83-T with alternatives