BSS131-TAPE-13
vs
BST82
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
80 V
Drain Current-Max (ID)
0.1 A
0.175 A
Drain-source On Resistance-Max
16 Ω
10 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
7
Pbfree Code
Rohs Code
HTS Code
8541.21.00.95
Samacsys Manufacturer
NXP
Feedback Cap-Max (Crss)
6 pF
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
0.3 W
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare BSS131-TAPE-13 with alternatives
Compare BST82 with alternatives