BSS129E6296
vs
BS107
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
SIEMENS A G
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
240 V
|
200 V
|
| Drain Current-Max (ID) |
0.15 A
|
0.13 A
|
| Drain-source On Resistance-Max |
20 Ω
|
26 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
10 pF
|
5 pF
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
7
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSS129E6296 with alternatives
Compare BS107 with alternatives