BSS129
vs
2N6659
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
35 V
Drain Current-Max (ID)
0.15 A
2 A
Drain-source On Resistance-Max
20 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
10 pF
10 pF
JEDEC-95 Code
TO-92
TO-205AD
JESD-30 Code
O-PBCY-T3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1 W
6.25 W
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
20
Package Description
TO-39, 3 PIN
Operating Temperature-Min
-55 °C
Pulsed Drain Current-Max (IDM)
3 A
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
5 ns
Turn-on Time-Max (ton)
5 ns
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