BSS125
vs
VN0650N3P008
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
SUPERTEX INC
Package Description
CYLINDRICAL, O-PBCY-T3
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
500 V
Drain Current-Max (ID)
0.1 A
0.2 A
Drain-source On Resistance-Max
45 Ω
16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
6 pF
20 pF
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
1
HTS Code
8541.29.00.95
Power Dissipation Ambient-Max
1 W
Transistor Application
SWITCHING
Compare BSS125 with alternatives
Compare VN0650N3P008 with alternatives