BSS123L99Z vs BS107ARLRM feature comparison

BSS123L99Z Texas Instruments

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BS107ARLRM Motorola Mobility LLC

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP MOTOROLA INC
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 200 V
Drain Current-Max (ID) 0.17 A 0.25 A
Drain-source On Resistance-Max 10 Ω 6.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-236AB TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
ECCN Code EAR99
Operating Temperature-Max 150 °C

Compare BSS123L99Z with alternatives

Compare BS107ARLRM with alternatives