BSS123E-6327
vs
BSS123
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
SIEMENS A G
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Part Package Code |
SOT-23
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
0.17 A
|
0.17 A
|
| Drain-source On Resistance-Max |
6 Ω
|
10 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
6
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| Feedback Cap-Max (Crss) |
|
2.8 pF
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation Ambient-Max |
|
0.35 W
|
| Power Dissipation-Max (Abs) |
|
0.35 W
|
| Reference Standard |
|
MIL-STD-202
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSS123E-6327 with alternatives
Compare BSS123 with alternatives