BSS123-L99Z vs VN0610LL feature comparison

BSS123-L99Z Texas Instruments

Buy Now Datasheet

VN0610LL Motorola Mobility LLC

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP MOTOROLA INC
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 60 V
Drain Current-Max (ID) 0.17 A 0.19 A
Drain-source On Resistance-Max 10 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 5 pF
JEDEC-95 Code TO-236AB TO-226AA
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 12
ECCN Code EAR99
JESD-609 Code e0
Power Dissipation-Max (Abs) 0.4 W
Terminal Finish Tin/Lead (Sn/Pb)

Compare BSS123-L99Z with alternatives

Compare VN0610LL with alternatives