BSS119E6327 vs VN0606M feature comparison

BSS119E6327 Infineon Technologies AG

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VN0606M Temic Semiconductors

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TEMIC SEMICONDUCTORS
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 60 V
Drain Current-Max (ID) 0.17 A 0.39 A
Drain-source On Resistance-Max 6 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.1 pF 10 pF
JESD-30 Code R-PDSO-G3 O-PBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Case Connection DRAIN
JEDEC-95 Code TO-237AA
Transistor Application SWITCHING

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