BSR19A,215
vs
BSR19AT/R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Part Package Code
TO-236
SOT-23
Pin Count
3
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1997-04-21
Samacsys Description
BSR19_BSR19A - NPN high voltage transistors
Samacsys Manufacturer
Nexperia
Samacsys Modified On
2022-10-10 09:50:17
Total Weight
7.56678
Category CO2 Kg
8.8
CO2
66.587664
Compliance Temperature Grade
Military: -65C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2024-01-23
CAS Accounted for Wt
98
CA Prop 65 Presence
YES
CA Prop 65 CAS Numbers
7440-48-4, 7440-02-0, 1333-86-4, 7439-92-1
EFUP
e
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.40
Collector Current-Max (IC)
0.3 A
0.3 A
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
30
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Finish
TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
100 MHz
Base Number Matches
1
3
Package Description
PLASTIC PACKAGE-3
Collector-Base Capacitance-Max
6 pF
Power Dissipation-Max (Abs)
0.35 W
Qualification Status
Not Qualified
VCEsat-Max
0.2 V
Compare BSR19A,215 with alternatives
Compare BSR19AT/R with alternatives