BSP315PL6327 vs BSP315E6433 feature comparison

BSP315PL6327 Infineon Technologies AG

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BSP315E6433 Siemens

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG SIEMENS A G
Package Description GREEN, PLASTIC PACKAGE-4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 24 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 50 V
Drain Current-Max (ID) 1.17 A 1.1 A
Drain-source On Resistance-Max 0.8 Ω 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 4.68 A 4.4 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Qualification Status Not Qualified

Compare BSP315PL6327 with alternatives

Compare BSP315E6433 with alternatives