BSP225TRL13
vs
BSP225-TAPE-13
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
250 V
Drain Current-Max (ID)
0.225 A
0.225 A
Drain-source On Resistance-Max
15 Ω
15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
15 pF
15 pF
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
1
Package Description
SMALL OUTLINE, R-PDSO-G4
Case Connection
DRAIN
Reference Standard
IEC-134
Compare BSP225TRL13 with alternatives
Compare BSP225-TAPE-13 with alternatives