BSP225-T
vs
934000540115
feature comparison
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain-source On Resistance-Max |
15 Ω
|
5 Ω
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| DS Breakdown Voltage-Min |
|
250 V
|
| Drain Current-Max (ID) |
|
0.375 A
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
15 pF
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Reference Standard |
|
IEC-60134
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BSP225-T with alternatives
Compare 934000540115 with alternatives