BSP171PE6327 vs SIHFL9014TR-GE3 feature comparison

BSP171PE6327 Infineon Technologies AG

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SIHFL9014TR-GE3 Vishay Siliconix

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 1.9 A 1.8 A
Drain-source On Resistance-Max 0.3 Ω 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF 31 pF
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Avalanche Energy Rating (Eas) 140 mJ
JEDEC-95 Code TO-261AA
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 14 A
Transistor Application SWITCHING

Compare BSP171PE6327 with alternatives

Compare SIHFL9014TR-GE3 with alternatives