BSP129E6327
vs
BSP135L6906
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
SIEMENS A G
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
SOT-223
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
GREEN, PLASTIC PACKAGE-4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
240 V
|
600 V
|
Drain Current-Max (ID) |
0.2 A
|
0.12 A
|
Drain-source On Resistance-Max |
20 Ω
|
45 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
0.6 A
|
0.48 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
1.8 W
|
Power Dissipation-Max (Abs) |
|
1.8 W
|
Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare BSP129E6327 with alternatives
Compare BSP135L6906 with alternatives