BSO303SPHXUMA1 vs HUF76113DK8T feature comparison

BSO303SPHXUMA1 Infineon Technologies AG

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HUF76113DK8T Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Part Package Code SOT
Package Description GREEN, PLASTIC, SOP-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 97 mJ
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 7.2 A 6 A
Drain-source On Resistance-Max 0.021 Ω 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
JEDEC-95 Code MS-012AA
Transistor Application SWITCHING

Compare BSO303SPHXUMA1 with alternatives

Compare HUF76113DK8T with alternatives