BSO203SP vs NTMD4N03R2G feature comparison

BSO203SP Infineon Technologies AG

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NTMD4N03R2G Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code No No
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROCHESTER ELECTRONICS LLC
Part Package Code SOT SOT
Package Description SMALL OUTLINE, R-PDSO-G8 ROHS COMPLIANT, MINIATURE, CASE 751-07, SOIC-8
Pin Count 8 8
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 97 mJ 80 mJ
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 9 A 4 A
Drain-source On Resistance-Max 0.021 Ω 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 NOT SPECIFIED
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235 260
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.35 W
Pulsed Drain Current-Max (IDM) 36 A 12 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Manufacturer Package Code CASE 751-07
Time@Peak Reflow Temperature-Max (s) 40

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