BSN10-AMMO
vs
ZVN4306ASTOA
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
ZETEX PLC
Package Description
CYLINDRICAL, O-PBCY-T3
IN-LINE, R-PSIP-W3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
50 V
60 V
Drain Current-Max (ID)
0.175 A
1.1 A
Drain-source On Resistance-Max
20 Ω
0.45 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
R-PSIP-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
200 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
WIRE
Terminal Position
BOTTOM
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare BSN10-AMMO with alternatives
Compare ZVN4306ASTOA with alternatives