BSM75GB120DN2
vs
C67076-A2106-A70
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SIEMENS A G
EUPEC GMBH & CO KG
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
ISOLATED
Collector Current-Max (IC)
105 A
105 A
Collector-Emitter Voltage-Max
1200 V
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf)
100 ns
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-CUFM-X7
R-XUFM-X7
Number of Elements
2
2
Number of Terminals
7
7
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
1250 W
Qualification Status
Not Qualified
Not Qualified
Rise Time-Max (tr)
140 ns
Surface Mount
NO
NO
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UPPER
UPPER
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
600 ns
Turn-off Time-Nom (toff)
450 ns
450 ns
Turn-on Time-Max (ton)
60 ns
Turn-on Time-Nom (ton)
30 ns
30 ns
VCEsat-Max
3 V
Base Number Matches
3
1
Transistor Application
POWER CONTROL
Compare BSM75GB120DN2 with alternatives
Compare C67076-A2106-A70 with alternatives