BSM400GA120DN2S
vs
BSM300GAR120DLC
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
EUPEC GMBH & CO KG
|
Part Package Code |
MODULE
|
|
Package Description |
MODULE-4
|
MODULE-5
|
Pin Count |
5
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
550 A
|
625 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JESD-30 Code |
R-XUFM-X4
|
R-XUFM-X5
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
5
|
Operating Temperature-Max |
150 °C
|
125 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
2700 W
|
2500 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
POWER CONTROL
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
630 ns
|
650 ns
|
Turn-on Time-Nom (ton) |
210 ns
|
190 ns
|
VCEsat-Max |
3 V
|
2.6 V
|
Base Number Matches |
3
|
2
|
|
|
|
Compare BSM400GA120DN2S with alternatives