BSM25GD120DN2
vs
6MBI25LB-120
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SIEMENS A G
|
COLLMER SEMICONDUCTOR INC
|
Package Description |
FLANGE MOUNT, R-CUFM-T17
|
FLANGE MOUNT, R-XUFM-X17
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
ISOLATED
|
|
Collector Current-Max (IC) |
35 A
|
25 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
|
Fall Time-Max (tf) |
100 ns
|
|
Gate-Emitter Thr Voltage-Max |
6.5 V
|
|
Gate-Emitter Voltage-Max |
20 V
|
|
JESD-30 Code |
R-CUFM-T17
|
R-XUFM-X17
|
Number of Elements |
6
|
6
|
Number of Terminals |
17
|
17
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
1200 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rise Time-Max (tr) |
130 ns
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
600 ns
|
|
Turn-off Time-Nom (toff) |
400 ns
|
1500 ns
|
Turn-on Time-Max (ton) |
150 ns
|
|
Turn-on Time-Nom (ton) |
75 ns
|
800 ns
|
VCEsat-Max |
3 V
|
|
Base Number Matches |
3
|
1
|
Pin Count |
|
17
|
Additional Feature |
|
HIGH SWITCHING SPEED
|
Transistor Application |
|
POWER CONTROL
|
|
|
|
Compare BSM25GD120DN2 with alternatives
Compare 6MBI25LB-120 with alternatives