BSH105TRL
vs
BSH105
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NEXPERIA
PHILIPS SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
1.05 A
1.5 A
Drain-source On Resistance-Max
0.25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Surface Mount
YES
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
2
3
Rohs Code
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
0.75 W
Terminal Finish
MATTE TIN
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