BSC22DN20NS3GATMA1 vs BUZ32H3045AATMA1 feature comparison

BSC22DN20NS3GATMA1 Infineon Technologies AG

Buy Now Datasheet

BUZ32H3045AATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No No
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 30 mJ 120 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 7 A 9.5 A
Drain-source On Resistance-Max 0.225 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 38 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code D2PAK
Additional Feature AVALANCHE RATED
JEDEC-95 Code TO-263AA

Compare BSC22DN20NS3GATMA1 with alternatives

Compare BUZ32H3045AATMA1 with alternatives