BSC084P03NS3EG vs EMB07P03V feature comparison

BSC084P03NS3EG Infineon Technologies AG

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EMB07P03V Excelliance MOS Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INFINEON TECHNOLOGIES AG EXCELLIANCE MOS CORP
Package Description TDSON-8 SMALL OUTLINE, S-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 105 mJ 33.8 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 14.9 A 15 A
Drain-source On Resistance-Max 0.0084 Ω 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 165 pF
JESD-30 Code R-PDSO-N8 S-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 200 A 100 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 62.2 ns
Turn-on Time-Max (ton) 224.9 ns
Base Number Matches 1 1

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Compare EMB07P03V with alternatives