BSC052N03S vs BSC059N03S feature comparison

BSC052N03S Infineon Technologies AG

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BSC059N03S Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-N8 PLASTIC, TDSON-8
Pin Count 8 8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 168 mJ 150 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 18 A 50 A
Drain-source On Resistance-Max 0.0082 Ω 0.0086 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PDSO-N8
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 54 W 48 W
Pulsed Drain Current-Max (IDM) 200 A 200 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235

Compare BSC052N03S with alternatives

Compare BSC059N03S with alternatives