BSC030N03LSGATMA1 vs SSP7436N-C feature comparison

BSC030N03LSGATMA1 Infineon Technologies AG

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SSP7436N-C Secos Corporation

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer INFINEON TECHNOLOGIES AG SECOS CORP
Package Description SMALL OUTLINE, R-PDSO-F8 SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 23 A 24 A
Drain-source On Resistance-Max 0.0047 Ω 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 50 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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