BSC029N025SG
vs
BSC0908NSATMA1
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
GREEN, PLASTIC, TDSON-8
|
SMALL OUTLINE, R-PDSO-F5
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
680 mJ
|
10 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
25 V
|
34 V
|
| Drain Current-Max (ID) |
24 A
|
14 A
|
| Drain-source On Resistance-Max |
0.0045 Ω
|
0.0127 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-F8
|
R-PDSO-F5
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
200 A
|
200 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| ECCN Code |
|
EAR99
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare BSC029N025SG with alternatives
Compare BSC0908NSATMA1 with alternatives