BSC028N03MSCGATMA1
vs
BSC025N03MSGATMA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-F8
SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
75 mJ
135 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
21 A
23 A
Drain-source On Resistance-Max
0.0036 Ω
0.003 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
R-PDSO-F8
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
400 A
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Pin Count
8
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
Terminal Finish
Tin (Sn)
Compare BSC028N03MSCGATMA1 with alternatives
Compare BSC025N03MSGATMA1 with alternatives