BS62LV1027PCG55 vs EDI88130LPS55CM feature comparison

BS62LV1027PCG55 Brilliance Semiconductor Inc

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EDI88130LPS55CM Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer BRILLIANCE SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code DIP DIP
Package Description DIP, DIP32,.6 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Pin Count 32 32
Reach Compliance Code unknown unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON COMMON
JESD-30 Code R-PDIP-T32 R-CDIP-T32
Length 41.91 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 128KX8 128KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Standby Current-Max 2e-7 A 0.002 A
Standby Voltage-Min 1.5 V 2 V
Supply Current-Max 0.046 mA 0.2 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 3 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 10.16 mm
Base Number Matches 1 4
Screening Level MIL-PRF-38535
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare EDI88130LPS55CM with alternatives