BS170 vs SI1031R-T1-GE3 feature comparison

BS170 Topaz Semiconductor

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SI1031R-T1-GE3 Vishay Siliconix

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer TOPAZ SEMICONDUCTOR VISHAY SILICONIX
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.5 A 0.14 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 0.83 W 0.28 W
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Base Number Matches 29 2
Pbfree Code Yes
Part Package Code SC-75A
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
DS Breakdown Voltage-Min 20 V
Drain-source On Resistance-Max 8 Ω
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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