BRC114EMP vs BCW60FN feature comparison

BRC114EMP Renesas Electronics Corporation

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BCW60FN Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 32 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 30 100
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOT-23
JEDEC-95 Code TO-236
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.31 W
Transition Frequency-Nom (fT) 250 MHz

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