BR3510
vs
GBJ3510
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
400 A
400 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
125 °C
150 °C
Output Current-Max
35 A
3.5 A
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Base Number Matches
13
11
HTS Code
8541.10.00.80
Case Connection
ISOLATED
Diode Element Material
SILICON
JESD-30 Code
R-PSFM-T4
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Compare BR3510 with alternatives
Compare GBJ3510 with alternatives