BR24T04-W vs F25S04PA-50DG feature comparison

BR24T04-W ROHM Semiconductor

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F25S04PA-50DG Elite Semiconductor Memory Technology Inc

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description DIP, DIP8,.3 DIP,
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Clock Frequency-Max (fCLK) 0.4 MHz 50 MHz
Data Retention Time-Min 40
Endurance 1000000 Write/Erase Cycles
I2C Control Byte 1010DDMR
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e3
Length 9.3 mm 9.27 mm
Memory Density 4096 bit 4194304 bit
Memory IC Type EEPROM FLASH
Memory Width 8 8
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 512 words 524288 words
Number of Words Code 512 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 512X8 512KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 4.21 mm 5 mm
Serial Bus Type I2C SPI
Standby Current-Max 0.000002 A
Supply Current-Max 0.002 mA
Supply Voltage-Max (Vsup) 5.5 V 3.3 V
Supply Voltage-Min (Vsup) 1.6 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.62 mm 7.62 mm
Write Cycle Time-Max (tWC) 5 ms
Write Protection HARDWARE HARDWARE/SOFTWARE
Base Number Matches 1 1
Part Package Code DIP
Pin Count 8
Output Characteristics 3-STATE
Programming Voltage 3.3 V
Type NOR TYPE

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