BR24L256FV-WE2 vs ST95010WB6 feature comparison

BR24L256FV-WE2 ROHM Semiconductor

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ST95010WB6 STMicroelectronics

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROHM CO LTD STMICROELECTRONICS
Part Package Code SOIC DIP
Package Description LSSOP, DIP, DIP8,.3
Pin Count 8 8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Clock Frequency-Max (fCLK) 0.4 MHz 1 MHz
JESD-30 Code R-PDSO-G8 R-PDIP-T8
Length 4.4 mm 9.55 mm
Memory Density 262144 bit 1024 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 32768 words 128 words
Number of Words Code 32000 128
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32KX8 128X8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LSSOP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, LOW PROFILE, SHRINK PITCH IN-LINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.5 mm 5.9 mm
Serial Bus Type I2C SPI
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 1.8 V 2.5 V
Supply Voltage-Nom (Vsup) 2.5 V 5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish PURE TIN TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Pitch 0.65 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Width 3 mm 7.62 mm
Write Cycle Time-Max (tWC) 5 ms 10 ms
Base Number Matches 1 1
Rohs Code No
Data Retention Time-Min 40
Endurance 1000000 Write/Erase Cycles
JESD-609 Code e0
Output Characteristics 3-STATE
Package Equivalence Code DIP8,.3
Standby Current-Max 0.000025 A
Supply Current-Max 0.0015 mA
Write Protection HARDWARE/SOFTWARE

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