BLV59
vs
BLV33F
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
3 A
|
12.5 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
10
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
70 W
|
|
| Base Number Matches |
7
|
7
|
| Collector-Emitter Voltage-Max |
|
33 V
|
| Highest Frequency Band |
|
VERY HIGH FREQUENCY BAND
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
750 MHz
|
|
|
|
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