BLV57
vs
BLV57
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
NXP SEMICONDUCTORS
|
Package Description |
,
|
FLANGE MOUNT, R-CDFM-F8
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
2 A
|
2 A
|
Collector-Emitter Voltage-Max |
27 V
|
27 V
|
Configuration |
SINGLE
|
COMMON EMITTER, 2 ELEMENTS
|
DC Current Gain-Min (hFE) |
15
|
15
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
Number of Elements |
1
|
2
|
Polarity/Channel Type |
NPN
|
NPN
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
2500 MHz
|
2500 MHz
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
SOT
|
Pin Count |
|
8
|
Manufacturer Package Code |
|
SOT161A
|
HTS Code |
|
8541.29.00.75
|
Additional Feature |
|
HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
|
Case Connection |
|
ISOLATED
|
Collector-Base Capacitance-Max |
|
30 pF
|
JESD-30 Code |
|
R-CDFM-F8
|
Number of Terminals |
|
8
|
Operating Temperature-Max |
|
200 °C
|
Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Power Dissipation Ambient-Max |
|
77 W
|
Power Dissipation-Max (Abs) |
|
77 W
|
Power Gain-Min (Gp) |
|
8 dB
|
Qualification Status |
|
Not Qualified
|
Surface Mount |
|
YES
|
Terminal Form |
|
FLAT
|
Terminal Position |
|
DUAL
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare BLV57 with alternatives
Compare BLV57 with alternatives