BLV11 vs 933582620112 feature comparison

BLV11 North American Philips Discrete Products Div

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933582620112 NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV NXP SEMICONDUCTORS
Package Description , FLANGE MOUNT, R-CDFM-F8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 3 A 2 A
Configuration SINGLE COMMON EMITTER, 2 ELEMENTS
DC Current Gain-Min (hFE) 10
JESD-609 Code e0
Number of Elements 1 2
Operating Temperature-Max 200 °C
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 36 W
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT) 800 MHz 2500 MHz
Base Number Matches 5 1
Pin Count 8
Additional Feature HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
Case Connection ISOLATED
Collector-Base Capacitance-Max 30 pF
Collector-Emitter Voltage-Max 27 V
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Terminals 8
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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