BLF861A
vs
BLF861A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ASI SEMICONDUCTOR INC
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-CDFM-F4
Pin Count
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Advanced Semiconductor, Inc.
Case Connection
SOURCE
SOURCE
Configuration
SINGLE
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
65 V
65 V
Drain Current-Max (ID)
18 A
18 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F4
R-CDFM-F4
Number of Elements
1
2
Number of Terminals
4
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
318 W
318 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Rohs Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BLF861A with alternatives
Compare BLF861A with alternatives