BLF861A,112
vs
BLF861A
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
NXP SEMICONDUCTORS
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Part Package Code
SOT
Pin Count
2
Manufacturer Package Code
SOT540A
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Case Connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
65 V
65 V
Drain Current-Max (ID)
18 A
18 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F4
Number of Elements
2
2
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
318 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Compare BLF861A,112 with alternatives