BLF6G38-10G,118
vs
BLF6G38-10
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
AMPLEON NETHERLANDS B V
|
NXP SEMICONDUCTORS
|
Package Description |
ROHS COMPLIANT, CERAMIC PACKAGE-2
|
ROHS COMPLIANT, CERAMIC PACKAGE-2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
65 V
|
65 V
|
Drain Current-Max (ID) |
3.1 A
|
3.1 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
L BAND
|
L BAND
|
JESD-30 Code |
S-CDSO-G2
|
R-CDFP-F2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLATPACK
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Reference Standard |
IEC-60134
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pin Count |
|
2
|
Operating Temperature-Max |
|
200 °C
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare BLF6G38-10G,118 with alternatives
Compare BLF6G38-10 with alternatives