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BLF4G10-160 vs BLF4G10LS-160 feature comparison

BLF4G10-160 NXP Semiconductors

Buy Now Datasheet

BLF4G10LS-160 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-CDFM-F2 FLANGE MOUNT, R-CDFM-F3
Pin Count 2 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 65 V 65 V
Drain Current-Max (ID) 15 A 15 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F2 R-CDFM-F3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare BLF4G10-160 with alternatives

Compare BLF4G10LS-160 with alternatives