BLF4G10-160,112
vs
BLF4G10S-120
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-CDFM-F2
FLATPACK, R-CDFP-F2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
SOURCE
SOURCE
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
65 V
65 V
Drain Current-Max (ID)
15 A
12 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F2
R-CDFP-F2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLATPACK
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare BLF4G10-160,112 with alternatives
Compare BLF4G10S-120 with alternatives