BGD802
vs
BGD902MI
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
SOT-115J
|
|
Reach Compliance Code |
unknown
|
unknown
|
Samacsys Manufacturer |
NXP
|
|
Additional Feature |
LOW NOISE, HIGH RELIABILITY
|
LOW NOISE, HIGH RELIABILITY
|
Characteristic Impedance |
75 Ω
|
75 Ω
|
Construction |
MODULE
|
MODULE
|
Gain |
18.5 dB
|
19 dB
|
Operating Frequency-Max |
860 MHz
|
900 MHz
|
Operating Frequency-Min |
40 MHz
|
40 MHz
|
Operating Temperature-Max |
100 °C
|
100 °C
|
Operating Temperature-Min |
-20 °C
|
-20 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Equivalence Code |
SOT-115J
|
|
Power Supplies |
24 V
|
|
RF/Microwave Device Type |
WIDE BAND HIGH POWER
|
WIDE BAND HIGH POWER
|
Supply Current-Max |
410 mA
|
|
Technology |
HYBRID
|
|
Base Number Matches |
5
|
1
|
|
|
|
Compare BGD802 with alternatives
Compare BGD902MI with alternatives