BFY181ES vs BFY181P feature comparison

BFY181ES Infineon Technologies AG

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BFY181P Siemens

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Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG SIEMENS A G
Package Description MICROWAVE, X-CXMW-F4 DISK BUTTON, O-CRDB-F4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE
Case Connection EMITTER EMITTER
Collector Current-Max (IC) 0.02 A 0.02 A
Collector-Base Capacitance-Max 0.29 pF 0.29 pF
Collector-Emitter Voltage-Max 12 V 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 55
Highest Frequency Band L BAND L BAND
JESD-30 Code X-CXMW-F4 O-CRDB-F4
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape UNSPECIFIED ROUND
Package Style MICROWAVE DISK BUTTON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Reference Standard ESA-SCC-5611/006
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position UNSPECIFIED RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 8000 MHz
Base Number Matches 3 1

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