BFT92TRL13 vs JAN2N4957 feature comparison

BFT92TRL13 NXP Semiconductors

Buy Now Datasheet

JAN2N4957 Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.025 A 0.03 A
Collector-Emitter Voltage-Max 15 V 30 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 O-MBCY-W4
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 4
Operating Temperature-Max 175 °C 200 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Gain-Min (Gp) 18 dB 17 dB
Qualification Status Not Qualified Qualified
Surface Mount YES NO
Terminal Finish TIN TIN LEAD
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 5000 MHz
Base Number Matches 1 2
Part Package Code TO-72
Pin Count 4
Samacsys Manufacturer Microsemi Corporation
Case Connection ISOLATED
Collector-Base Capacitance-Max 0.8 pF
DC Current Gain-Min (hFE) 10
JEDEC-95 Code TO-72
Operating Temperature-Min -65 °C
Power Dissipation-Max (Abs) 0.2 W
Reference Standard MIL-19500/426

Compare BFT92TRL13 with alternatives

Compare JAN2N4957 with alternatives